AS4C32M16SC-7TIN Dynamic Random Access Memory C8051F350-GQ AD7276BRMZ Memory Data Storage

AS4C32M16SC-7TIN Dynamic Random Access Memory C8051F350-GQ AD7276BRMZ Memory Data Storage

Features

•Fast clock rate: 133 MHz

• Programmable Mode registers - CAS Latency: 1 or 2 or 3 - BurstLength:1,2,4,8,or fullpage - Burst Type: Sequentialor Interleaved

• Auto Refresh and Self Refresh

• 8192 refresh cycles/64ms(7.8 µs) T≦85°C

• Power down mode

• Single +3.3V±0.3V power supply

• Operating Temperature Range: - Industrial: TA = -40~85°C

• Interface: LVTTL

• - Pb free and Halogen free Fully Synchronous to Positive Clock Edge Four Banks controlled by BA0 & BA1 Multiple Burst Read with Single Write Operation Automatic and Controlled Precharge Command Data Mask for Read / Write control (x8, x16, x32) Data Mask for Byte Control (x16,x32) Random Column Address every CLK (1-N Rule) Available in 86/54 Pin 400 mil plastic TSOP II package,TSOPII–54 (x8, x16) TSOPII–86 (x32)

Description

The AS4C16M32SC-7TIN, AS4C32M16SC-7TIN and AS4C64M8SC-7TIN are four bank Synchronous DRAMs organized as 4 banks x 4MBit x32, 4 banks x 8Mbit x 16 and 4 banks x 16MBit x 8MBit x 8 respectively. These synchronous devices achieve high speed data transfer rates for CAS latencies by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to a system clock.

The device is designed to comply with all industry standards set for synchronous DRAM products, both electrically and mechanically.All of the control, address, data input and output circuits are synchronized with the positive edge externally supplied clock

Operating the four memory banks in an interleave fashion allows random access operation to occur at a higher rate than is possible with standard DRAMs. A sequential and gapless data rate is possible depending on burst length, CAS latency and speed grade of the device.

Auto Refresh (CBR) and Self Refresh operation are supported. These devices operate with a single 3.3 V ± 0.3 V power supply. All 512-Mbit components are available in TSOPII–[86/54] packages.

AS4C32M16SC-7TIN Dynamic Random Access Memory C8051F350-GQ AD7276BRMZ Memory Data Storage Images